WebAug 23, 2024 · IRHNMC9A7120 概要 Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 krad(Si) TID, COTS Features Single event effect (SEE) hardened Low RDS(on) Low total gate charge Simple drive requirements Hermetically sealed Ceramic package Light weight Surface mount ESD Rating: Class 1C per MIL-STD-750, …
IRHNMC9A7120 datasheet - 100V 100kRad Single N …
WebIRHNMC9A7120 Pre-Irradiation Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300 kRads (Si) 1 Symbol Units Test Conditions Min. … WebIRHNMC9A7120 100 N 23 0.055 SMD-0.2 ceramic lid JANS 2N7651U8C /776* IRHNPC9A7110 100 N 6 0.150 SMD-0.1 ceramic lid JANS 2N7656xx* TBD* IRHNS9A7064 60 N 100 0.004 SupIR-SMD JANS 2N7652U2A /777* IRHMS9A7064 60 N 45 0.007 TO-254AA low ohmic JANS 2N7652T1 /777* IRHNKC9A7034 60 N 40 0.018 SMD-0.5e … ttc route 77
IRHNMC9A7120 Infineon 電子部品IC, IRHNMC9A7120 データシー …
WebDownload Infineon Technologies Corporation IRHNMC9A7120 pdf datasheet file. Electronics components database. Search Circuit. Section Search. Log In. Infineon Technologies Corporation IRHNMC9A7120 Datasheet. If it is not shown correctly, Click here to open the file on a separate window 0-C D-L M-R S ... WebIRHNMC9A7120 Overview Rad hard, 100V, 23A, single, N-channel MOSFET, R9 in a SMD-0.2C package - SMD-0.2C, 100 krad(Si) TID, COTS Features Single event effect (SEE) … WebThe IRHNMC9A7120 from Infineon Technologies is a MOSFET with Continous Drain Current 23 A, Drain Source Resistance 55 milliohm, Drain Source Breakdown Voltage 100 V, Gate … ttc route 80